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KHB1D0N60I Dataheets PDF



Part Number KHB1D0N60I
Manufacturers KEC
Logo KEC
Description N-Channel MOSFET
Datasheet KHB1D0N60I DatasheetKHB1D0N60I Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com A C D I J B FEATURES VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM .

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com A C D I J B FEATURES VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 + 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Ta=25 Derate above 25 ) RATING SYMBOL KHB1D0N60D KHB1D0N60I VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 28 0.22 150 -55 150 1.0 0.57 3.0 50 2.8 5.5 28 0.22 600 30 1.0* 0.57* 3.0* mJ mJ G DPAK UNIT V A V I D C J A O N H K B M E V/ns W W/ 1 F F L DIM MILLIMETERS _ 0.2 A 6.6 + _ 0.2 B 6.1 + _ 0.3 C 5.34 + _ 0.2 D 0.7 + _ 0.3 E 9.3 + _ 0.2 F 2.3 + _ 0.1 G 0.76 + H 0.96 MAX _ 0.1 I 2.3 + _ 0.1 J 0.5 + _ 0.2 K 1.8 + _ 0.1 L 0.5 + _ 0.3 1.02 + M _ 0.1 N 1.0 + O 1.5 2 3 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient 1. GATE 2. DRAIN 3. SOURCE RthJC RthCS RthJA 4.53 50 110 4.53 50 110 /W /W /W IPAK-S D * : Drain current limited by maximum junction temperature. G S 2005. 10. 24 Revision No : 1 1/6 KHB1D0N60D/I www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=0.5A 600 2.0 0.65 9.7 10 4.0 100 12 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS


KHB1D0N60D KHB1D0N60I IS42R32200C1


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