SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
KHB1D0N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
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A C D
I J
B
FEATURES
VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC
K Q E H P F F L M O
DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 +
1
2
3
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Ta=25 Derate above 25
)
RATING SYMBOL KHB1D0N60D KHB1D0N60I VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 28 0.22 150 -55 150 1.0 0.57 3.0 50 2.8 5.5 28 0.22 600 30 1.0* 0.57* 3.0* mJ mJ
G
DPAK
UNIT V
A
V
I D
C
J
A
O N H K
B
M E
V/ns W W/
1
F
F
L
DIM MILLIMETERS _ 0.2 A 6.6 + _ 0.2 B 6.1 + _ 0.3 C 5.34 + _ 0.2 D 0.7 + _ 0.3 E 9.3 + _ 0.2 F 2.3 + _ 0.1 G 0.76 + H 0.96 MAX _ 0.1 I 2.3 + _ 0.1 J 0.5 + _ 0.2 K 1.8 + _ 0.1 L 0.5 + _ 0.3 1.02 + M _ 0.1 N 1.0 + O 1.5
2
3
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient
1. GATE 2. DRAIN 3. SOURCE
RthJC RthCS RthJA
4.53 50 110
4.53 50 110
/W /W /W
IPAK-S
D
* : Drain current limited by maximum junction temperature.
G
S
2005. 10. 24
Revision No : 1
1/6
KHB1D0N60D/I
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ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=0.5A 600 2.0 0.65 9.7 10 4.0 100 12 V V/ A V nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS