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K7P321888M Dataheets PDF



Part Number K7P321888M
Manufacturers Samsung Electronics
Logo Samsung Electronics
Description 1Mx36 & 2Mx18 SRAM
Datasheet K7P321888M DatasheetK7P321888M Datasheet (PDF)

K7P323688M K7P321888M 1Mx36 & 2Mx18 SRAM www.DataSheet4U.com 32Mb M-die LW SRAM Specification 119BGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" .

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K7P323688M K7P321888M 1Mx36 & 2Mx18 SRAM www.DataSheet4U.com 32Mb M-die LW SRAM Specification 119BGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. -1- Dec. 2005 Rev 1.3 K7P323688M K7P321888M Document Title 1Mx36 & 2Mx18 Synchronous Pipelined SRAM 1Mx36 & 2Mx18 SRAM www.DataSheet4U.com Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Initial Document - Recommended DC operating conditions are changed Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6 - AC Characteristics are changed TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.4 / 0.4 - > 0.3 / 0.3 / 0.3 TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.6 / 0.7 - > 0.5 / 0.5 / 0.5 TKHAX / TKHDX / TKHWX / TKHSX : 1.6 / 1.7 / 2.0 - > 1.5 / 1.6 / 2.0 Draft Date Apr. 2002 Feb. 2003 Remark Advance Advance Rev. 0.2 - PACKAGE PIN CONFIGURATION are changed Numbering each SA pins. - AC Characteristics are changed TKHQV (-33) : 0.5 - > 0.6 - PIN CAPACITANCE is changed Add Clock Pin capacitance - Fill the themal Data - Remove 333MHz Bin - JTAG DC operating conditions are changed Change VIH, VIL VOH, VOL - Add Pb free. - Modify package dimensions Feb. 2003 Advance Rev. 0.3 Mar. 2003 Advance Rev. 0.4 May 2003 Advance Rev. 1.0 Sep. 2004 Final Rev. 1.1 Oct. 2004 Final Rev. 1.2 Rev. 1.3 Oct. 2005 Dec. 2005 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters. -2- Dec. 2005 Rev 1.3 K7P323688M K7P321888M 1Mx36 & 2Mx18 Synchronous Pipelined SRAM FEATURES • 1Mx36 or 2Mx18 Organizations. • 1.8V VDD/1.5V or 1.8V VDDQ. • HSTL Input and Output Levels. • Differential, HSTL Clock Inputs K, K. • Synchronous Read and Write Operation • Registered Input and Registered Output • Internal Pipeline Latches to Support Late Write. • Byte Write Capability(four byte write selects, one for e.


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