IXTH20N50D

High Voltage MOSFET N-Channel, Depletion Mode IXTH20N50D IXTT20N50D VDSX = ID25 = ≤RDS(on) 500V 20A 330mΩ TO-268 (IXTT) Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 500 500 V V ±30 V ±40 V 20 A 50 A 400 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 4g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS = -10V, ID = 250μA VGS(off) VDS = 25V, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSX, VGS= -10V RDS(on) ID(on) VGS = 10V, ID = 10A, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 500 V -1.5 - 3.5 V ±100 nA 25 μA 500 μA 330 mΩ 2.3 A GS TO-247 (IXTH) D (TAB) ...