High Voltage MOSFET
N-Channel, Depletion Mode
IXTH20N50D IXTT20N50D
VDSX = ID25 = ≤RDS(on)
500V 20A 330mΩ
TO-268 (IXTT)
Symbol
VDSX VDGX
VGSX VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings 500 500
V V
±30 V ±40 V
20 A 50 A
400 W
- 55 ... +150 150
- 55 ... +150
°C °C °C
300 °C 260 °C
1.13 / 10
Nm/lb.in.
4g 6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = -10V, ID = 250μA
VGS(off)
VDS = 25V, ID = 250μA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSX, VGS= -10V
RDS(on) ID(on)
VGS = 10V, ID = 10A, Note 1 VGS = 0V, VDS = 25V, Note 1
TJ = 125°C
Characteristic Values Min. Typ. Max.
500 V
-1.5 - 3.5 V
±100 nA
25 μA 500 μA
330 mΩ
2.3 A
GS TO-247 (IXTH)
D (TAB)
G D S
G = Gate S = Source
.