K1B5616BAM

K1B5616BA(B)M Preliminary UtRAM www.DataSheet4U.com 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. -1Revision 0.3 January 2006 K1B5616BA(B)M Document Title Preliminary UtRAM www.DataSheet4U.com 16Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. 0.0 History Initial - Design target Draft Date July 29, 2005 Remark Preliminary 0.1 Revised September 13, 2005 - Added ADV interrupt comment in Burst READ(ADV Interrupt) and Burst WRITE(ADV Interrupt). - Changed ICC3 latency in test conditions from latency 3 to latency 5. - Defined DC...