DatasheetsPDF.com

IXTP14N60P

IXYS

PolarHV Power MOSFET

PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25...


IXYS

IXTP14N60P

File Download Download IXTP14N60P Datasheet


Description
PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting torque (TO-220 &TO-3P) TO-263 TO-220 TO-3P Maximum Ratings 600 V 600 V 30 V 40 V 14 A 42 A 14 A 900 mJ 300 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in. 2.5 g 3.0 g 5.5 g Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 100 nA 5 A 100 μA 450 550 m © 2015 IXYS CORPORATION, All Rights Reserved VDSS = ID25 =  RDS(on) 600V 14A 550m TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S TO-3P (IXTQ) D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Dr...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)