IXFX64N60P

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 64 150 64 80 3.5 20 1040 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-264 AA (IXFK) G D S (TAB) PLUS247 (IXFX) (TAB) W °C °C °C °C N/lb G = Gate S = Source Features z D = Drain Tab = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247 300 20..120/4.5..25 z z 1.13/10 Nm/lb.in. 10 6 g g z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 96 V V nA µA µA mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, I...