SI7856DP

Si7856DP New Product Vishay Siliconix www.DataSheet4U.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V ID (A) 25 23 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters D Synchronous Rectifiers PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 25 Steady State Unit V 14 11 60 A 1.6 1.9 1.2 –55 to 150 W _C ID IDM IS PD TJ, Tstg 19 4.5 5.4 3.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71850 S-20351—Rev. A, 18-Apr-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7856DP Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gat...