Power MOSFET
PolarHVTM Power MOSFET
IXTA 7N60P IXTP 7N60P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 600 V
ID25
=
7A
RD...
Description
PolarHVTM Power MOSFET
IXTA 7N60P IXTP 7N60P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 600 V
ID25
=
7A
RDS(on) ≤ 1.1 Ω
Symbol
VDSS V
DGR
VGS VGSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
T J
=
25°
C
to
175°
C;
R GS
=
1
MΩ
Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
T J
≤150°
C,
R G
=
18
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings TO-220 (IXTP)
600
V
600
V
±30
V
±40
V
G DS
7
A
14
A TO-263 (IXTA)
7
A
20
mJ
400
mJ
10
V/ns
G S
(TAB) (TAB)
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
3
g
G = Gate S = Source
D = Drain TAB = Drain
Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
600
V
V GS(th)
V DS
=
V, GS
I
D
=
100µA
3.0
5.5 V
IGSS
VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
5 µA 50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
1.1 Ω
Advantages
l Easy to mount l Space savings l High power density
© 2006 IXYS All right...
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