Power MOSFET
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche ...
Description
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS
VDSS ID25
= = RDS(on) ≤ ≤ trr
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600 V 30 A 240 mΩ 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 30 80 30 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220 (IXFV...S)
G S
D (TAB)
TO-247 (IXFH) W °C °C °C °C °C
G D D (TAB) S
1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque TO-247 TO-268 PLUS220 (TO-247)
300 260
1.13/10 Nm/lb.in. 6 5 4 g g g
TO-268 (IXFT)
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 2.5 5.0 ±100 25 250 240 V V nA µA µA mΩ
G = Gate S = Source
G
S D = Drain TAB = Drain
D (TAB)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to...
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