Power MOSFET
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PolarHV HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Ra...
Description
Advance Technical Information
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PolarHV HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Preliminary Data Sheet
TM
IXFN 48N60P
VDSS ID25
RDS(on) trr
= 600 V = 48 A ≤ 135 mΩ ≤ 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight VISOL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features
International standard packages Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
z z
Mounting torque Terminal connection torque (M4) SOT-227B 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 2500 3000 300 g V~ V~ °C
z
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
isolation Fast recovery diode Unclamped Inducti...
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