Silicon PIN Photodiode
TEMD5110
Vishay Semiconductors
www.DataSheet4U.com
Silicon PIN Photodiode
Description
TEMD5110 is a high speed and hig...
Description
TEMD5110
Vishay Semiconductors
www.DataSheet4U.com
Silicon PIN Photodiode
Description
TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR Emitters operating at wavelength 870 nm or 950 nm.
Features
Large radiant sensitive area (A = 7.5 mm2) Wide angle of half sensitivity ϕ = ± 65 ° e4 High photo sensitivity Fast response times Small junction capacitance Plastic package with IR filter (λ = 870...950 nm) Lead-free component Component in accordance to ELV 2000/53/EC, RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t≤3s Tamb ≤ 25 °C Test condition Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 215 100 - 40 to + 100 - 40 to + 100 260 350 Unit V mW °C °C °C °C K/W
Document Number 84658 Rev. 1.0, 08-Mar-05
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TEMD5110
Vishay Semiconductors
www.DataSheet4U.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Test condition IF = 50 mA IR = 100 µA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Symbol VF V(BR...
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