SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES
High emitter-base voltage : VEBO=...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
A J
KRC281U~KRC286U
EPITAXIAL PLANAR
NPN TRANSISTOR
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E M B M D 3
2 1
C
EQUIVALENT CIRCUIT
C B R1
H N K 1. EMITTER 2. BASE 3. COLLECTOR N
DIM A B C D E G H J K L M N
MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.10 MIN
E
L
G
USM
MAXIMUM RATING (Ta=25
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 100 150 -55 150 UNIT V V V mA mW
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Marking
MARK SPEC
TYPE MARK KRC281U KRC282U KRC283U KRC284U KRC285U KRC286U MQ MR MS MT MU MV
Type Name
2005. 5. 9
Revision No : 0
1/2
KRC281U~KRC286U
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ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC281U KRC282U KRC283U Input Resistor KRC284U KRC285U KRC286U Transition Frequency Collector Output Capacitance * ...