DatasheetsPDF.com



Part Number IXTV30N50P
Manufacturers IXYS
Logo IXYS
Description PolarHV Power MOSFET
Datasheet IXTV30N50P DatasheetIXTV30N50P Datasheet (PDF)

  IXTV30N50P   IXTV30N50P
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) PLUS220, PLUS220SMD TO-268 TO-3P TO-247 500 V 500 V ±30 V ±40 V 30 A 75 A 30 A 40 mJ 1.2 J 10 V/ns 460 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 11 65/2.5 15 N/lb. 4 g 5 g 5.5 g 6 g Symbol Test Conditions (TJ = 25° C, unless otherwi.



IXTQ30N50P IXTV30N50P IXTV30N50PS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)