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Part Number IXTV30N50PS
Manufacturers IXYS
Logo IXYS
Description PolarHV Power MOSFET
Datasheet IXTV30N50PS DatasheetIXTV30N50PS Datasheet (PDF)

  IXTV30N50PS   IXTV30N50PS
Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ www.DataSheet4U.com TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C G G G D S (TAB) TO-247 AD (IXTH) (TAB) TO-268 (IXTT) S D (TAB) PLUS220 (IXTV) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque (TO-247, TO-3P) TO-247 TO-268 PLUS220, PLUS220SMD TO-3P Characteristic Values Min. Typ. Max. 500 3.0 300 260 Md Weight 1.13/10 Nm/l.



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