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CXG1175UR

SONY

High Power DPDT Switch

www.DataSheet4U.com High Power DPDT Switch with Logic Control Preliminary Preliminary CXG1175UR Description This IC...


SONY

CXG1175UR

File DownloadDownload CXG1175UR Datasheet


Description
www.DataSheet4U.com High Power DPDT Switch with Logic Control Preliminary Preliminary CXG1175UR Description This IC can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Applications: Antenna switch for cellular handsets, Dual-band W-CDMA) Features ‹ Low insertion loss ‹ 2 CMOS compatible control line Package Small package size: 20-pin UQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C) Š Bias voltage Š Control voltage Š Operating temperature Š Storage temperature VDD Vctl Topr Tstg 7 5 –35 to +85 –60 to +150 V V °C °C This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- PE05327-PS CXG1175UR www.DataSheet4U.com Block Diagram and Recommended Circuit CRF GND1 GND GND GND 6 GND RF2 8 F6 5 10 F5 RF3 CRF GND 12 F3 GND2 13 F2 11 9 7 4 F4 F1 3 GND GND RF4 CRF GND 14 F8 15 F7 2 RF1 CRF GND 1 16 Cbypass (100pF) VDD 17 GND 18 GND 19 CTLB 20 CTLA When using thi...




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