High Power DPDT Switch
www.DataSheet4U.com
High Power DPDT Switch with Logic Control
Preliminary
Preliminary
CXG1175UR
Description
This IC...
Description
www.DataSheet4U.com
High Power DPDT Switch with Logic Control
Preliminary
Preliminary
CXG1175UR
Description
This IC can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Applications: Antenna switch for cellular handsets, Dual-band W-CDMA)
Features
Low insertion loss 2 CMOS compatible control line
Package
Small package size: 20-pin UQFN
Structure
GaAs JPHEMT MMIC
Absolute Maximum Ratings
(Ta = 25°C) Bias voltage Control voltage Operating temperature Storage temperature VDD Vctl Topr Tstg 7 5 –35 to +85 –60 to +150 V V
°C °C
This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
PE05327-PS
CXG1175UR
www.DataSheet4U.com
Block Diagram and Recommended Circuit
CRF GND1 GND GND GND 6 GND RF2 8 F6 5
10 F5 RF3 CRF GND 12 F3 GND2 13 F2 11
9
7
4 F4 F1 3
GND
GND
RF4 CRF GND
14 F8 15 F7
2
RF1 CRF GND
1
16 Cbypass (100pF) VDD
17 GND
18 GND
19 CTLB
20 CTLA
When using thi...
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