PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
Rev. 01 — 4 May 2005
www.DataSheet4U.com
Product data sheet
1...
PBSS2540E
40 V, 500 mA
NPN low VCEsat (BISS)
transistor
Rev. 01 — 4 May 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS)
transistor in a SOT416 (SC-75) SMD plastic package.
PNP complement: PBS3540E.
1.2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base Min IC = 500 mA; IB = 50 mA
[1]
Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance
Typ 380
Max 40 500 1 500
Unit V mA A mΩ
-
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS2540E
40 V, 500 mA
NPN low VCEsat (BISS)
transistor
www.DataSheet4U.com
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description base emitter collector
1 2 3 1 2
sym021
Simplified outline
Symbol
3
3. Ordering information
Table 3: Ordering information Package Name PBSS2540E SC-75 Description plastic surface mounted package; 3 leads Version SOT416 Type number
4. Marking
Table 4: Marking codes Mar...