IXFR80N50P

Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(on) trr = 500 V = 42 A < 72 mΩ < 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 42 75 200 80 80 305 10 300 -55 ... +150 150 -55 ... +150 V V V V ISOPLUS247 (IXFR) E153432 G A A A A mJ J V/ns D S ISOLATED TAB D = Drain G = Gate S = Source Features W °C °C °C °C °C N/lb V~ g g z z z International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force 50/60 Hz, RMS, 1 minute TO-264 PLUS247 300 260 20..120/4.5..25 2500 10 6 z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V...