IXTH26N60P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD Maximum Ratings 600 V 600 V ±30 V ±40 V 26 A 65 A 13 A 40 mJ 1.2 J 10 V/ns 460 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 11..65/2.5..15 N/lb 5.5 g 6.0 g 5.0 g 4.0 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 600 V VGS(th) VDS = VGS, ID = 250 μA 3.0 5.0 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 10 μA 250 μA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 270 mΩ © 2006 IXYS All rights reserved G DS TO-3P (IXTQ) G D S TO-268 (IXTT) D (TAB) G S PLUS220 (IXTV) D (TAB) G D S PLUS220SMD (IXTV_S) D (TAB) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Fast Reco...