N-Channel Power MOSFET
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60...
Description
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD
Maximum Ratings
600
V
600
V
±30
V
±40
V
26
A
65
A
13
A
40
mJ
1.2
J
10
V/ns
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
5.5
g
6.0
g
5.0
g
4.0
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values Min. Typ. Max.
600
V
VGS(th)
VDS = VGS, ID = 250 μA
3.0
5.0 V
IGSS
VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
10 μA 250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
270 mΩ
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G DS
TO-3P (IXTQ)
G D S
TO-268 (IXTT)
D (TAB)
G S
PLUS220 (IXTV)
D (TAB)
G D S
PLUS220SMD (IXTV_S)
D (TAB)
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features z Fast Reco...
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