NTMFS4122N

NTMFS4122N Power MOSFET 30 V, 23 A, Single N−Channel, SO−8 Flat Lead Features www.DataSheet4U.com Low RDS(on) Low Inductance SO−8 Package This is a Pb−Free Device Applications http://onsemi.com ID MAX (Note 1) 23 A Notebooks, Graphics Cards DC−DC Converters Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1 ) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, Tstg IS EAS ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 5.8 9.1 6.5 0.9 68 −55 to 150 7.0 220 W A °C A mJ A Symbol VDSS VGS ID Value 30 $20 14 10 23 2.2 W Unit V V A V(BR)DSS 30 V RDS(on) TYP 4.6 mW @ 10 V 6.3 mW @ 4.5 V D G S MARKING DIAGRAM D 1 tp = 10 ms SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4122N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 75 V, VGS = 10 V, IPK = 21 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4122N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) TL 260 °C ORDERING INFORMATION Symbol RqJA RqJA RqJA Value 56.3 21.5 141.6 NTMFS4122NT3G Unit °C/W Device NTMFS4122NT1G Package SO−8 FL...