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Part Number IXTU1R4N60P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTU1R4N60P DatasheetIXTU1R4N60P Datasheet (PDF)

  IXTU1R4N60P   IXTU1R4N60P
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220 Maximum Ratings 600 V 600 V 30 V 40 V 1.4 A 2.1 A 1.4 A 75 mJ 10 V/ns 50 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.40 g 0.35 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 25μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved Ch.



NTMFS4122N IXTU1R4N60P IXTP1R4N60P


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