IXTQ88N30P

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) Symbol VDSS V DGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-247 TO-264 TO-3P & TO-268 Maximum Ratings 300 V 300 V G D S ±20 V TO-264 (IXTK) ±30 V 88 A 75 A 220 A 60 A 60 mJ G D S 2.0 J TO-3P (IXTQ) 10 V/ns 600 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 10 g 5.5 g G DS TO-268 (IXTT) G S D (TAB) D (TAB) (TAB) D (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 µA Characteristic Values Min. Typ. Max. 300 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS V =0V GS T J = 125° C 100 µA 1 mA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 40 m Ω G = Gate S = Source D = Drain TAB = Drain Features l International standard package l Unclamped Inductive Switching (UIS...