Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2R4N50P IXTP2R4N50P
Symbol
VDSS VDGR VGSS VGSM ID2...
Description
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2R4N50P IXTP2R4N50P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220
Maximum Ratings
500
V
500
V
30
V
40
V
2.4
A
4.5
A
2.4
A
100
mJ
10
V/ns
56
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
0.35
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 25μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.0
5.5 V
50 nA
1 A 50 A
3.75
VDSS =
ID25 = RDS(on)
500V 2.4A 3.75
TO-252 (IXTY)
G S D (Tab)
TO-220 (IXTP)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Low Q
G
Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge
Circiuts
...
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