PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 01 — 13 June 2005
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Product data sheet
1....
PBSS5220V
20 V, 2 A
PNP low VCEsat (BISS)
transistor
Rev. 01 — 13 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS)
transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
1.2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat Quick reference data Conditions open base tp ≤ 300 µs IC = −1 A; IB = −100 mA Min Typ 140 Max −20 −2 −4 210 Unit V A A mΩ collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Symbol Parameter
Philips Semiconductors
PBSS5220V
20 V, 2 A
PNP low VCEsat (BISS)
transistor
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2. Pinning information
Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter
4 6 5 4 3 1, 2, 5, 6
Simplified outline
Symbol
collector collector
1 2 3
sym030
3. Ordering information
Table 3: Ordering information Package Name PBSS5220V Description plastic surface mounted package; 6 leads Version SOT666 Type number
4. Marking
Table 4:...