PBLS2003D

PBLS2003D 20 V PNP BISS loadswitch Rev. 01 — 24 June 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) collector-emitter saturation resistance collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio IC = −1 A; IB = −100 mA open base [1] Conditions open base Min - Typ 185 Max −20 −1 280 Unit V A mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO IO R1 R2/R1 [1] 7 0.8 10 1 50 100 13 1.2 V mA kΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBLS2003D www.DataSheet4U.com 20 V PNP BISS loadswitch 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 sym036 Simplified outline 6 5 4 Symbol 6 ...