BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG
PNP/
PNP matched double
transistors
Rev. 01 — 7 August 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP/
PNP matched double
transistors in small Surface-Mounted Device (SMD) plastic packages. The
transistors are fully isolated internally.
Table 1. Product overview Package NXP BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG SOT457 SC-74 small SOT363 JEITA SC-88 very small Package configuration
Type number
1.2 Features
I I I I Current gain matching Base-emitter voltage matching Drop-in replacement for standard double
transistors AEC-Q101 qualified
1.3 Applications
I Current mirror I Differential amplifier
1.4 Quick reference data
Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = −5 V; IC = −2 mA Conditions open base Min 200 Typ 290 Max −65 −100 450 Unit V mA
Per
transistor
NXP Semiconductors
BCM856BS; BCM856DS
PNP/
PNP matched double
transistors
Quick reference data …continued Parameter hFE matching VBE matching Conditions VCE = −5 V; IC = −2 mA VCE = −5 V; IC = −2 mA
[1]
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Table 2. Symbol Per device hFE1/hFE2 VBE1−VBE2
Min 0.9 -
Typ 1 -
Max 2
Unit
[2]
mV
[1] [2]
The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter ...