2SC5885

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5885 DESCRIPTION ·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IB Base Current- Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5885 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 3A; IB= 0.75A VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 IC= 3A; VCE= 5V VECF C-E Diode Forward Voltage IF= 3A fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V; f= 0.5MHz Switching times; Resistive load tstg Storage Time tf Fall Time IC= 3A...