IXTQ74N20P

PolarHT Power MOSFET TM IXTQ 74N20P IXTT 74N20P VDSS ID25 www.DataSheet4U.com RDS(on) = 200 V = 74 A = 34 mΩ N-Channel Enhancement Mode Avalanche Energy Rated Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V TO-3P (IXTQ) G A A A mJ J V/ns D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain D (TAB) W °C °C °C °C G = Gate S = Source Features z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99119C(08/05) IXTQ 74N20P IXTT 74N20P Symbol Test Conditions Characteristic Value...