IXFX64N50P

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFK 64N50P IXFX 64N50P VDSS ID25 RDS(on) trr = 500 V = 64 A ≤ 85 mΩ ≤ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 64 150 64 80 2.5 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C Features z z z G D S (TAB) D = Drain G = Gate S = Source PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain Tab = Drain Mounting torque (TO-264) TO-264 PLUS247 1.13/10 Nm/lb.in. 10 6 300 g g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±200 25 1000 85 V V nA µA µA mΩ International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ...