TC59YM916BKG40C

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers of 8000/6400/4800 MB/s. XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed memory transactions. The highly efficient protocol yields over 95% utilization while allowing fine access granularity. The device's 8 banks support up to four interleaved transactions. FEATURES Highest pin bandwidth available − 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling − Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count − Programmable on-chip termination Adaptive impedance matching Reduced system cost and routing complexity Highest sustained bandwidth per DRAM device − − − − − 8000/6400/4800 MB/s sustained data rate 8 banks: bank-interleaved transactions at full bandwidth Dynamic r...