K4Y54084UF

www.DataSheet4U.com K4Y5416(/08/04)4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 www.DataSheet4U.com K4Y5416(/08/04)4UF Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81 XDR DRAM Version 1.0( Jan. 2005) - Delete “Preliminary” - Based on the Rambus XDR DRAMTM Datasheet Version 0.85 Version 1.0 Jan. 2005 Page 0 www.DataSheet4U.com K4Y5416(/08/04)4UF Overview XDR DRAM The Rambus XDR DRAM device is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256Mb XDR DRAM device is a CMOS DRAM organized as 16M words by 16bits. The use of Differential Rambus Signaling Level(DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers up to 8000 MB/s. XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed memory transactions. The highly-efficient protocol yields over 95% utilization while allowing fine access granuarity. The device’s eight banks support up to four interleaved transactions. Features ♦ Highest pin bandwidth available - 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling ♦ Bi-d...