PBSS302ND
40 V NPN low VCEsat (BISS) transistor
Rev. 01 — 19 April 2005
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Product data sheet
1. Pro...
PBSS302ND
40 V
NPN low VCEsat (BISS)
transistor
Rev. 01 — 19 April 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS)
transistor in a SOT457 (SC-74) SMD plastic package.
PNP complement: PBSS302PD.
1.2 Features
s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation
1.3 Applications
s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film
Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC = 6 A; IB = 600 mA
[2]
Conditions open base
[1]
Min -
Typ 55
Max 40 4 15 75
Unit V A A mΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS302ND
40 V
NPN low VCEsat (BISS)
transistor
www.DataSheet4U.com
2. Pinning information
Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector
1 2 3 6 5 4 3 4
sym014
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3:...