NTMS4118N

NTMS4118N Product Preview Power MOSFET 30 V, 14.8 A, Single N−Channel, SO−8 Features www.DataSheet4U.com Low RDS(on) Fast Switching Times Pb−Free Package is Available Applications http://onsemi.com ID MAX (Note 1) 14.8 A Notebooks, Graphics Cards Low Side Switch DC−DC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C Current t (N (Note t 1) Steady State t v10 s Dissipation Power Dissi ation (Note 1) Steady State t v10 s Continuous Drain C rrent (Note 2) Current Power Dissi Dissipation ation (Note 2) Pulsed Drain Current Steady y State TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 2.2 TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, Tstg IS EAS TL ID 9.1 6.6 0.9 44 −55 to 150 2.8 TBD 260 W A °C A mJ °C A Symbol VDSS VGS ID Value 30 $20 12.3 8.8 14.8 1.5 W Unit V V A V(BR)DSS 30 V RDS(on) TYP 4.6 mW @ 10 V 6.5 mW @ 4.5 V D G S MARKING DIAGRAM/ PIN ASSIGNMENT 1 8 1 SO−8 CASE 751 STYLE 12 4118N A L Y W G Source Source Source Gate 4118N AYWW G 8 Drain Drain Drain Drain tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) (Top View) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t v10 s (Note 1) Junc...