Si7444DP

Si7444DP Vishay Siliconix www.DataSheet4U.com N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 23.6 rDS(on) (W) 0.0061 @ VGS = 10 V Qg (Typ) 105 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested D High Threshold Voltage At High Temperature PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7444DP-T1—E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 23.6 18.9 60 4.5 45 100 5.4 3.4 Steady State Unit V 14 11.2 A 1.6 mJ 1.9 1.2 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72920 S-42058—Rev. B, 15-Nov-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W 1 Si7444DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage...