IXTV18N60P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ Symbol V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, T J ≤ 150°C, R G = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P PLUS220 & PLUS220SMD Maximum Ratings TO-3P (IXTQ) 600 V 600 V ±30 V ±40 V G D S 18 A 54 A PLUS220 (IXTV) 18 A 30 mJ 1.0 J 10 V/ns G DS D (TAB) D (TAB) 360 -55 ... +150 150 -55 ... +150 W PLUS220SMD (IXTV...S) °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. G S D (TAB) 6 g 4 g G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA Characteristic Values Min. Typ. Max. 600 V VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V IGSS VGS = ±30 V, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 25 μA 250 μA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 420 mΩ Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space s...