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PolarHV Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
TM
IXTQ 22N60P IXTV 22N60P IXTV 22N60PS
VDSS ID25
RDS(on)
= 600 V = 22 A ≤ 330 mΩ
TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1.0 10 V V V V A A A mJ J V/ns
G D S D (TAB)
G D S
(TAB)
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
G S D (TAB)
1.13/10 Nm/lb.in. 6 5.0 g g
G = Gate S = Source D = Drain TAB = Drain
TO-3P PLUS220 & PLUS220SMD
Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDS.