DatasheetsPDF.com



Part Number IXTQ22N60P
Manufacturers IXYS
Logo IXYS
Description PolarHV Power MOSFET
Datasheet IXTQ22N60P DatasheetIXTQ22N60P Datasheet (PDF)

  IXTQ22N60P   IXTQ22N60P
www.DataSheet4U.com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(on) = 600 V = 22 A ≤ 330 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1.0 10 V V V V A A A mJ J V/ns G D S D (TAB) G D S (TAB) PLUS220 (IXTV) PLUS220SMD (IXTV_S) G S D (TAB) 1.13/10 Nm/lb.in. 6 5.0 g g G = Gate S = Source D = Drain TAB = Drain TO-3P PLUS220 & PLUS220SMD Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDS.



IXTV18N60PS IXTQ22N60P IXTV22N60P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)