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PolarHV Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
TM
IXTQ 22N60P IXTV 22N60P IXTV 22N60PS
VDSS ID25
RDS(on)
= 600 V = 22 A ≤ 330 mΩ
TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1.0 10 V V V V A A A mJ J V/ns
G D S D (TAB)
G D S
(TAB)
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
G S D (TAB)
1.13/10 Nm/lb.in. 6 5.0 g g
G = Gate S = Source D = Drain TAB = Drain
TO-3P PLUS220 & PLUS220SMD
Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ
z z
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Easy to mount Space savings High power density
© 2005 IXYS All rights reserved
DS99250B(04/05)
IXTQ 22N60P
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 15 21 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 Ω (External) 20 60 23 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 55 0.31 (TO-3P) 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXTV 22N60P IXTV 22N60PS
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TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 22 66 1.5 A A V ns
D
PLUS220 (IXTV) Outline
E E1 L2 A A1 E1
IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 22A -di/dt = 100 A/µs VR = 100V 410 4.0
D1
µC
L1 L
L3
PLUS220SMD
3X b
E E1 L2 A A1
c A2
2X e
E1
D A3 L3 L L1 2X b e c A2 L4
Terminals: 1 - Gate 3 - Source
2 - Drain TAB - Drain
A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4
Terminals: 1 - Gate 3 - Source Drain
2 - Drain TAB -
A A1 A2 b c D D1 E E1 e L L1 L2 L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXTQ 22N60P
Fig. 1. Output Characteristics @ 25ºC
22 20 18 16 VGS = 10V 8V 45 40 35 VGS = 10V 9V 8V
IXTV 22N60P IXTV 22N60PS
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Fig. 2. Extended Output Characteristics @ 25ºC
I D - Amperes
7.5V
I D - Amperes
14 12 10 8 6 4 2 0 0 1 2 3 4 5 6
30 25 20 15 10
7.5V
7V
7V
6.5V 6V
6V
5 0
7
8
9
0
3
6
9
12
15
18
21
24
27
30
V D S - Volts Fig. 3. Output Characteristics @ 125ºC
22 20 18 16 VGS = 10V 8V 7V 3.4 3.1 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 11A I D = 22A
I D - Amperes
14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 5.5V 5V 6V 6.5V
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3 2.8 2.6 VGS = 10V TJ = 125º C 24
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
20
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 TJ = 25º C 4
I D - Amperes
16
12
8
0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2005 IXYS All rights reserved
IXTQ 22N60P
IXTV 22N60P IXTV 22N60PS
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Fig. 7. Input Adm ittance
30 27 24 30 27 24
Fig. 8. Transconductance
TJ = -40º C 25º C 125º C
18 15 12 9 6 3 0 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125º C 25º C -40º C
g f s - Siemens
I D - Amperes
21
21 18 15 12 9 6 3 0 0
3
6
9
12
15
18
21
24
27
30
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
70 60 8 50 7 10 9 VDS = 300V I D = 11A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 25º C 0.8 0.9 1 1.1
40 30 TJ = 125º C 20 10 0 0.4 0.5 0.6 0.7
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
100
Fig. 11. Capacitance
10000 f = 1MHz
R DS(on) Limit
Capacitance - picoFarads
C iss 1000
I D.