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IXTV22N60P Dataheets PDF



Part Number IXTV22N60P
Manufacturers IXYS
Logo IXYS
Description PolarHV Power MOSFET
Datasheet IXTV22N60P DatasheetIXTV22N60P Datasheet (PDF)

www.DataSheet4U.com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(on) = 600 V = 22 A ≤ 330 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25.

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www.DataSheet4U.com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(on) = 600 V = 22 A ≤ 330 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1.0 10 V V V V A A A mJ J V/ns G D S D (TAB) G D S (TAB) PLUS220 (IXTV) PLUS220SMD (IXTV_S) G S D (TAB) 1.13/10 Nm/lb.in. 6 5.0 g g G = Gate S = Source D = Drain TAB = Drain TO-3P PLUS220 & PLUS220SMD Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99250B(04/05) IXTQ 22N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 15 21 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 Ω (External) 20 60 23 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 55 0.31 (TO-3P) 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXTV 22N60P IXTV 22N60PS www.DataSheet4U.com TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 22 66 1.5 A A V ns D PLUS220 (IXTV) Outline E E1 L2 A A1 E1 IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 22A -di/dt = 100 A/µs VR = 100V 410 4.0 D1 µC L1 L L3 PLUS220SMD 3X b E E1 L2 A A1 c A2 2X e E1 D A3 L3 L L1 2X b e c A2 L4 Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 Terminals: 1 - Gate 3 - Source Drain 2 - Drain TAB - A A1 A2 b c D D1 E E1 e L L1 L2 L3 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 22N60P Fig. 1. Output Characteristics @ 25ºC 22 20 18 16 VGS = 10V 8V 45 40 35 VGS = 10V 9V 8V IXTV 22N60P IXTV 22N60PS www.DataSheet4U.com Fig. 2. Extended Output Characteristics @ 25ºC I D - Amperes 7.5V I D - Amperes 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 30 25 20 15 10 7.5V 7V 7V 6.5V 6V 6V 5 0 7 8 9 0 3 6 9 12 15 18 21 24 27 30 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 22 20 18 16 VGS = 10V 8V 7V 3.4 3.1 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 11A I D = 22A I D - Amperes 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 5.5V 5V 6V 6.5V -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3 2.8 2.6 VGS = 10V TJ = 125º C 24 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 20 R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 TJ = 25º C 4 I D - Amperes 16 12 8 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes TC - Degrees Centigrade © 2005 IXYS All rights reserved IXTQ 22N60P IXTV 22N60P IXTV 22N60PS www.DataSheet4U.com Fig. 7. Input Adm ittance 30 27 24 30 27 24 Fig. 8. Transconductance TJ = -40º C 25º C 125º C 18 15 12 9 6 3 0 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125º C 25º C -40º C g f s - Siemens I D - Amperes 21 21 18 15 12 9 6 3 0 0 3 6 9 12 15 18 21 24 27 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 70 60 8 50 7 10 9 VDS = 300V I D = 11A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25º C 0.8 0.9 1 1.1 40 30 TJ = 125º C 20 10 0 0.4 0.5 0.6 0.7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 V S D - Volts Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 100 Fig. 11. Capacitance 10000 f = 1MHz R DS(on) Limit Capacitance - picoFarads C iss 1000 I D.


IXTQ22N60P IXTV22N60P IXTV22N60PS


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