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IXEH25N120D1

IXYS

NPT3 IGBT

IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 A...


IXYS

IXEH25N120D1

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IXEH 25N120 IXEH 25N120D1 www.DataSheet4U.com NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB) IXEH 25N120 IXEH 25N120D1 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 36 24 60 VCES 10 200 V V A A A µs W Features NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current TO-247 package - industry standard outline - epoxy meets UL 94V-0 Applications AC drives DC drives and choppers Uninteruptible power supplies (UPS) switched-mode and resonant-mode power supplies inductive heating, cookers Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.6 3.2 4.5 0.2 200 205 105 320 175 4.1 1.5 1.2 100 3.2 6.5 0.2 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.63 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20...




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