NPT3 IGBT
IXEH 25N120 IXEH 25N120D1
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NPT3 IGBT
IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V
C
C
TO-247 A...
Description
IXEH 25N120 IXEH 25N120D1
www.DataSheet4U.com
NPT3 IGBT
IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V
C
C
TO-247 AD
G
G
E
E
G C E C (TAB)
IXEH 25N120
IXEH 25N120D1
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 36 24 60 VCES 10 200 V V A A A µs W
Features NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current TO-247 package - industry standard outline - epoxy meets UL 94V-0 Applications AC drives DC drives and choppers Uninteruptible power supplies (UPS) switched-mode and resonant-mode power supplies inductive heating, cookers
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.6 3.2 4.5 0.2 200 205 105 320 175 4.1 1.5 1.2 100 3.2 6.5 0.2 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.63 K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 600 V; IC = 20...
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