DatasheetsPDF.com



Part Number IXTT120N15P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTT120N15P DatasheetIXTT120N15P Datasheet (PDF)

  IXTT120N15P   IXTT120N15P
PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS V DGR VDSS VGSM ID25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 120 A 75 A 260 A 60 A 60 mJ 2.0 J 10 V/ns 600 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 5.0 g Symbol Test Conditions (T J = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 150 V .



IXTQ120N15P IXTT120N15P IXTK180N15P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)