IXTK180N15P

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK180N15P VDSS = ID25 = RDS(on)  150V 180A 11m Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 150 V 150 V  20 V  30 V 180 A 75 A 380 A 60 A 4 J 800 W 10 V/ns -55 ... +175 C 175 C -55 ... +175 C 300 C 260 C 1.13/10 Nm/lb.in. 10 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 500μA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 5.0 V 200 nA 25 A 250 A 11 m TO-264 G D S G = Gate S = Source Tab D = Drain Tab = Drain Features  International Standard Package  Avalanche Rated  Low Package Inductance  Fast intrinsic Diode  Dynamic dv/dt Rated  Low RDS(on) and QG Advantages Easy to mount Space savings High power density © 2015 IXYS CORPORATION,All Rights Reserved DS99297G(8/15) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 IDSS, Note 1 Ciss...