Document
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Preliminary Data Sheet
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C
IXFC 110N10P
VDSS ID25
RDS(on)
= 100 V = 66 A = 17 mΩ
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Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.0 10 158 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb g Features z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages
z z
ISOPLUS220TM (IXFC) E153432
G D S
TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
G = Gate S = Source
D = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting Force ISOPLUS220 (PLUS220)
300 250 11..65 / 2.5..15 2
FC Weight
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C
Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 17 V V nA µA µA mΩ
Space savings High power density
VGS = 10 V, ID = 55 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
DS99212(01/05)
IXFC 110N10P
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 40 3550 S pF pF pF ns ns ns ns nC nC nC 0.95 K/W K/W
ISOPLUS220 Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID =55 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
1370 440 21
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 Ω (External)
25 65 25 110
VGS= 10 V, VDS = 0.5 VDSS, ID = 55 A
25 62 0.75 0.21
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. 66 250 1.5 A A V
IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A -di/dt = 100 A/µs VR = 50 V
200 ns 0.6 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXFC 110N10P
Fig. 1. Output Characteristics @ 25ºC
110 100 90 80 VGS = 10V 9V 220 200 180 160 9V VGS = 10V
Fig. 2. Extended Output Characteristics @ 25ºC
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I D - Amperes
I D - Amperes
70 60 50 40 30 20 10
140 120 100 80 60 7V 8V
8V
7V
6V 5V
40 20 0 1.6 1.8 2 0 1 2 3 4 5 6 7 8 9 10 6V
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V D S - Volts Fig. 3. Output Characteristics @ 150ºC
110 100 90 80 VGS = 10V 9V 2.4 2.2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2 1.8 I D = 110A 1.6 1.4 1.2 1 0.8 0.6 I D = 55A
I D - Amperes
70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5
8V 7V
6V
5V
3
3.5
4
-50
-25
0
25
50
75
100
125
150
175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
3 2.8 2.6 80 70 TJ = 175ºC 60
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
External Lead Current Limit
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 VGS = 15V
I D - Amperes
TJ = 25ºC
50 40 30 20 10 0
VGS = 10V
100 125 150 175 200 225 250
-50
-25
0
25
50
75
100
125
150
175
I D - Amperes
TC - Degrees Centigrade
© 2005 IXYS All rights reserved
IXFC 110N10P
Fig. 7. Input Adm ittance
250 225 200 TJ = -40ºC 25ºC 150ºC 70 60 50
Fig. 8. Transconductance
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g f s - Siemens
I D - Amperes
175 150 125 100 75 50 25 0 4 5 6 7
40 30 20 10 0
TJ = -40ºC 25ºC 150ºC
8
9
1 0
1 1
0
50
100
150
200
250
300
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 8 250 7 10 9 VDS = 50V I D = 55A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150ºC TJ = 25ºC 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
200 150 100 50 0
6 5 4 3 2 1 0 0 20 40 60 80 100 120
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 175ºC
Fig. 11. Capacitance
10000
Capacitance - picoFarads
TC = 25ºC
I D - Amperes
C iss
R DS(on) Limit 25µs 100µs 1ms
1000 C oss
100
C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 10 1 10
10ms DC
100
1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFC 110N10P
Fig. 13. Maximum Transient Therma.