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IXFC110N10P Dataheets PDF



Part Number IXFC110N10P
Manufacturers IXYS
Logo IXYS
Description PolarHT HiPerFET Power MOSFET
Datasheet IXFC110N10P DatasheetIXFC110N10P Datasheet (PDF)

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.DataSheet4U.com Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.0 10 158 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb.

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.DataSheet4U.com Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.0 10 158 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb g Features z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D S TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting Force ISOPLUS220 (PLUS220) 300 250 11..65 / 2.5..15 2 FC Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 17 V V nA µA µA mΩ Space savings High power density VGS = 10 V, ID = 55 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99212(01/05) IXFC 110N10P www.DataSheet4U.com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 40 3550 S pF pF pF ns ns ns ns nC nC nC 0.95 K/W K/W ISOPLUS220 Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID =55 A, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 1370 440 21 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 Ω (External) 25 65 25 110 VGS= 10 V, VDS = 0.5 VDSS, ID = 55 A 25 62 0.75 0.21 Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. 66 250 1.5 A A V IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A -di/dt = 100 A/µs VR = 50 V 200 ns 0.6 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFC 110N10P Fig. 1. Output Characteristics @ 25ºC 110 100 90 80 VGS = 10V 9V 220 200 180 160 9V VGS = 10V Fig. 2. Extended Output Characteristics @ 25ºC www.DataSheet4U.com I D - Amperes I D - Amperes 70 60 50 40 30 20 10 140 120 100 80 60 7V 8V 8V 7V 6V 5V 40 20 0 1.6 1.8 2 0 1 2 3 4 5 6 7 8 9 10 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 110 100 90 80 VGS = 10V 9V 2.4 2.2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2 1.8 I D = 110A 1.6 1.4 1.2 1 0.8 0.6 I D = 55A I D - Amperes 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 8V 7V 6V 5V 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 3 2.8 2.6 80 70 TJ = 175ºC 60 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature External Lead Current Limit R D S ( o n ) - Normalized 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 VGS = 15V I D - Amperes TJ = 25ºC 50 40 30 20 10 0 VGS = 10V 100 125 150 175 200 225 250 -50 -25 0 25 50 75 100 125 150 175 I D - Amperes TC - Degrees Centigrade © 2005 IXYS All rights reserved IXFC 110N10P Fig. 7. Input Adm ittance 250 225 200 TJ = -40ºC 25ºC 150ºC 70 60 50 Fig. 8. Transconductance www.DataSheet4U.com g f s - Siemens I D - Amperes 175 150 125 100 75 50 25 0 4 5 6 7 40 30 20 10 0 TJ = -40ºC 25ºC 150ºC 8 9 1 0 1 1 0 50 100 150 200 250 300 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 350 300 8 250 7 10 9 VDS = 50V I D = 55A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 150ºC TJ = 25ºC 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 200 150 100 50 0 6 5 4 3 2 1 0 0 20 40 60 80 100 120 V S D - Volts Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 TJ = 175ºC Fig. 11. Capacitance 10000 Capacitance - picoFarads TC = 25ºC I D - Amperes C iss R DS(on) Limit 25µs 100µs 1ms 1000 C oss 100 C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 10 1 10 10ms DC 100 1000 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. V D S - Volts IXFC 110N10P Fig. 13. Maximum Transient Therma.


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