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IXFR66N50Q2 Dataheets PDF



Part Number IXFR66N50Q2
Manufacturers IXYS
Logo IXYS
Description HiPerFET Power MOSFETs Q-Class
Datasheet IXFR66N50Q2 DatasheetIXFR66N50Q2 Datasheet (PDF)

HiPerFETTM Power MOSFETs Q-Class IXFR 66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ.

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HiPerFETTM Power MOSFETs Q-Class IXFR 66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 50 264 66 75 4.0 20 500 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 V V V V A A A mJ J V/ns W °C °C °C °C N/lb g VDSS ID25 RDS(on) trr = = = ≤ www.DataSheet4U.com 500 V 50 A 85 mΩ 250 ns ISOPLUS247TM (IXFR) G (TAB) D S D = Drain TAB = Drain G = Gate S = Source Features z z z z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 500 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 85 m Ω © 2005 IXYS All rights reserved DS99076(8/03) IXFR 66N50Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 30 44 6800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 270 32 VGS = 10 V, VDS = 0.5 ï VDSS, ID = IT RG = 1.0 Ω (External), 16 60 10 199 VGS = 10 V, VDS = 0.5 ï VDSS, ID = IT 42 92 0.25 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS247 Outline www.DataSheet4U.com gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 66 264 1.5 250 A A V ns µC A Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1 10 Note: Test current IT = 33A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFR 66N50Q2 Fig. 1. Output Characteristics @ 25ºC 70 VGS = 10V 60 50 8V 7V 140 6V 120 160 VGS = 10V 9V 8V Fig. 2. Extended Output Characteristics www.DataSheet4U.com @ 25ºC I D - Amperes I D - Amperes 100 80 60 40 20 0 5V 7V 40 5.5V .


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