Document
HiPerFETTM Power MOSFETs
Q-Class
IXFR 66N50Q2
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 50 264 66 75 4.0 20 500 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 V V V V A A A mJ J V/ns W °C °C °C °C N/lb g
VDSS ID25 RDS(on) trr
= = = ≤
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500 V 50 A 85 mΩ 250 ns
ISOPLUS247TM (IXFR)
G
(TAB) D S D = Drain TAB = Drain
G = Gate S = Source
Features
z
z z
z z
Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
Advantages
z z z
Easy to mount Space savings High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 500 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
85 m Ω
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DS99076(8/03)
IXFR 66N50Q2
Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 30 44 6800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 270 32 VGS = 10 V, VDS = 0.5 ï VDSS, ID = IT RG = 1.0 Ω (External), 16 60 10 199 VGS = 10 V, VDS = 0.5 ï VDSS, ID = IT 42 92 0.25 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS247 Outline
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gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = IT, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 66 264 1.5 250 A A V ns µC A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1 10
Note: Test current IT = 33A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXFR 66N50Q2
Fig. 1. Output Characteristics @ 25ºC
70 VGS = 10V 60 50 8V 7V 140 6V 120 160 VGS = 10V 9V 8V
Fig. 2. Extended Output Characteristics www.DataSheet4U.com @ 25ºC
I D - Amperes
I D - Amperes
100 80 60 40 20 0 5V 7V
40 5.5V .