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Part Number IXTQ26N50P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTQ26N50P DatasheetIXTQ26N50P Datasheet (PDF)

  IXTQ26N50P   IXTQ26N50P
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS = ID25 = ≤ RDS(on) 500 V 26 A 230 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 PLUS220 & PLUS220SMD 500 V G D 500 V S ±30 V TO-268 (IXTT) ±40 V D (TAB) 26 A 78 A G S 26 A 40 mJ PLUS220 (IXTV) 1.0 J D (TAB) 10 V/ns 400 W G D S D (TAB) -55 ... +150 150 -55 ... +150 °C PLUS220SMD (IXTV_S) °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 5.5 g 5 g G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Symbol Test Cond.



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