Power MOSFET
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS
VDS...
Description
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS
VDSS =
ID25 = ≤ RDS(on)
500 V 26 A 230 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD T
J
TJM Tstg TL TSOLD Md Weight
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 PLUS220 & PLUS220SMD
500
V
G
D
500
V
S
±30
V TO-268 (IXTT)
±40
V
D (TAB)
26
A
78
A
G S
26
A
40
mJ PLUS220 (IXTV)
1.0
J
D (TAB)
10
V/ns
400
W
G D S
D (TAB)
-55 ... +150 150
-55 ... +150
°C PLUS220SMD (IXTV_S) °C °C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
5.5
g
5
g
G S
G = Gate S = Source
D (TAB)
D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
500
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.5 V
IGSS
VGS = ±30 VDC, VDS = 0
±100 nA
I
DSS
V =V
DS
DSS
VGS = 0 V
TJ = 125° C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
230 m Ω
Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
...
Similar Datasheet