Document
PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN140N20P
Symbol V
DSS
V DGR
VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg
VISOL
Md
Weight
Test Conditions
T J
= 25C to 175C
TJ = 25C to 175C, RGS = 1M
Continuous Transient
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 175C
TC = 25C
50/60 Hz, RMS IISOL 1mA
Mounting Torque Terminal Connection Torque
t = 1min t = 1s
Maximum Ratings
200
V
200
V
20
V
30
V
115
A
280
A
60
A
4
J
10
V/ns
680
W
-55 ... +175
C
175
C
-55 ... +175
C
2500
V~
3000
V~
1.5/13 1.3/11.5
Nm/lb.in Nm/lb.in
30
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
Characteristic Values Min. Typ. Max.
200
V
VGS(th)
VDS = VGS, ID = 4mA
2.5
5.0 V
IGSS
VGS = 20V, VDS = 0V
100 nA
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
25A 250 A
RDS(on)
VGS = 10V, ID = 70A, Note 1 VGS = 15V, ID = 140A, Note 1
18 m
14
m
VDSS = 200V
ID25 = 115A
RDS(on) 18m
trr
200ns
miniBLOC E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
Features
International Standard Package
m
iniBLO
C,
with
Aluminium
Nitride
Isolation
Low Package Inductance
Avalanche Rated
Low RDS(ON) and QG Fast Intrinsic Diode
Advantages
Easy to Mount Space Savings High Power Density
© 2022 Littelfuse, Inc.
DS99245G(5/22)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 70A, Note 1
C iss
Coss Crss td(on) tr td(off) tf
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 70A RG = 3.3 (External)
Qg(on) Qgs Q
gd
VGS = 10V, VDS = 0.5 • VDSS, ID = 70A
RthJC RthCS
Characteristic Values Min. Typ. Max.
50
84
S
7500
pF
1630
pF
280
pF
30
ns
35
ns
150
ns
90
ns
240
nC
50
nC
110
nC
0.22C/W 0.05 C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr QRM IRM
IF = 25A, -di/dt = 150A/µs VR = 100V
Characteristic Values Min. Typ. Max.
140 A
280 A
1.5 V
200 ns
0.6
C
6.0
A
IXFN140N20P
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Littelfuse reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,931,844 4,860,072 5,017,508 4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,710,405 B2 6,710,463
6,727,585 7,005,734 B2 7,157,338B2 6,759,692 7,063,975B2 6,771,478 B2 7,071,537
ID - Amperes
ID - Amperes
140 120 100
80 60 40 20
0 0
Fig. 1. Output Characteristics @ TJ = 25oC
VGS = 10V 9V 8V
7V
6V
5V
0.5
1
1.5
2
2.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 150oC
140
VGS = 10V 9V
120
8V
100
7V
80
60
6V 40
20
5V 0
0
1
2
3
4
5
6
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current
4.0
VGS = 10V
3.5
15V
3.0
TJ = 175oC
2.5
2.0
1.5
1.0
0.5 0
TJ = 25oC
40
80
120
160
200
240
280
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXFN140N20P
Fig. 2. Extended Output Characteristics @ TJ = 25oC
300 VGS = 10V
250
9V
200 8V
150
100
7V
50
6V
0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature
3.2
VGS = 10V
2.8
2.4
I D = 140A
2.0
I D = 70A
1.6
1.2
0.8
0.4
-50
-25
120
0
25
50
75
100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
100
80
60
40
20
0 -50 -25
0
25
50
75
100 125 150 175
TC - Degrees Centigrade
RDS(on) - Normalized
© 2022 Littelfuse, Inc.
IXFN140N20P
ID - Amperes
240 VDS = 10V
200
Fig. 7. Input Admittance
160
120
80
TJ = 150oC 25oC
40
- 40oC
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
250
200
150
100
TJ = 150oC
50
TJ = 25oC
0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VSD - Volts
100,000
Fig. 11. Capacitance
f = 1 MHz
10,000
Ciss
VGS - Volts
g f s - Siemens
120
VDS = 10V
100
80
60
Fig. 8. Transconductance
TJ = - 40oC
25oC 150oC
40
20
0
0
40
80
120
160
200
240
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 100V
I D = 70A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
50
100
150
200
250
QG - NanoCoulom.