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IXFN140N20P Dataheets PDF



Part Number IXFN140N20P
Manufacturers IXYS
Logo IXYS
Description PolarHT HiPerFET Power MOSFET
Datasheet IXFN140N20P DatasheetIXFN140N20P Datasheet (PDF)

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings .

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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 200 V 200 V 20 V  30 V 115 A 280 A 60 A 4 J 10 V/ns 680 W -55 ... +175 C 175 C -55 ... +175 C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V TJ = 150C 25A 250 A RDS(on) VGS = 10V, ID = 70A, Note 1 VGS = 15V, ID = 140A, Note 1 18 m 14 m VDSS = 200V ID25 = 115A RDS(on)  18m trr  200ns miniBLOC E153432 S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features International Standard Package m   iniBLO C, with Aluminium Nitride Isolation Low Package Inductance  Avalanche Rated Low RDS(ON) and QG Fast Intrinsic Diode Advantages Easy to Mount Space Savings High Power Density © 2022 Littelfuse, Inc. DS99245G(5/22) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 70A, Note 1 C iss Coss Crss td(on) tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 70A RG = 3.3 (External) Qg(on) Qgs Q gd VGS = 10V, VDS = 0.5 • VDSS, ID = 70A RthJC RthCS Characteristic Values Min. Typ. Max. 50 84 S 7500 pF 1630 pF 280 pF 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 110 nC 0.22C/W 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 25A, -di/dt = 150A/µs VR = 100V Characteristic Values Min. Typ. Max. 140 A 280 A 1.5 V 200 ns 0.6 C 6.0 A IXFN140N20P Note 1: Pulse test, t 300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,931,844 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 7,157,338B2 6,759,692 7,063,975B2 6,771,478 B2 7,071,537 ID - Amperes ID - Amperes 140 120 100 80 60 40 20 0 0 Fig. 1. Output Characteristics @ TJ = 25oC VGS = 10V 9V 8V 7V 6V 5V 0.5 1 1.5 2 2.5 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150oC 140 VGS = 10V 9V 120 8V 100 7V 80 60 6V 40 20 5V 0 0 1 2 3 4 5 6 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current 4.0 VGS = 10V 3.5 15V 3.0 TJ = 175oC 2.5 2.0 1.5 1.0 0.5 0 TJ = 25oC 40 80 120 160 200 240 280 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXFN140N20P Fig. 2. Extended Output Characteristics @ TJ = 25oC 300 VGS = 10V 250 9V 200 8V 150 100 7V 50 6V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature 3.2 VGS = 10V 2.8 2.4 I D = 140A 2.0 I D = 70A 1.6 1.2 0.8 0.4 -50 -25 120 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade RDS(on) - Normalized © 2022 Littelfuse, Inc. IXFN140N20P ID - Amperes 240 VDS = 10V 200 Fig. 7. Input Admittance 160 120 80 TJ = 150oC 25oC 40 - 40oC 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 250 200 150 100 TJ = 150oC 50 TJ = 25oC 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VSD - Volts 100,000 Fig. 11. Capacitance f = 1 MHz 10,000 Ciss VGS - Volts g f s - Siemens 120 VDS = 10V 100 80 60 Fig. 8. Transconductance TJ = - 40oC 25oC 150oC 40 20 0 0 40 80 120 160 200 240 ID - Amperes Fig. 10. Gate Charge 10 9 VDS = 100V I D = 70A 8 I G = 10mA 7 6 5 4 3 2 1 0 0 50 100 150 200 250 QG - NanoCoulom.


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