IXTT50P10

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS = ID25 = ≤ RDS(on) - 100V - 50A 55mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings -100 V -100 V ±20 V ±30 V - 50 A - 200 A - 50 A 30 mJ 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g 5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250 μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 VDSS VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 3.0 - 5.0 V ±100 nA - 25 μA -1 mA 55 mΩ G D S TO-268 (IXTT) (TAB) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages JEDEC TO-247 AD z Low RDS(ON) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance (< 5nH) - easy to drive and to protect Applications z High side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment Advantages z Easy to mount with 1 screw (isolated moun...