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BLF6G22LS-130

NXP Semiconductors

Power LDMOS transistor


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BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mo...



NXP Semiconductors

BLF6G22LS-130

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