BLF6G22LS-100

BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18.2 ηD (%) 29 IMD3 (dBc) −37[1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ‹ Average output power = 25 W ‹ Gain = 18.2 dB ‹ Efficiency = 29 % ‹ IMD3 = −37 dBc ‹ ACPR = −41 dBc „ Easy power control „ Integrated ESD protection „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (2000 MHz to 2200 MHz) „ Internally matched for ease of use „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G22LS-100 www.DataSheet4U.com Power LDMOS transistor 1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in ...