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BLF6G27LS-75

NXP Semiconductors

WiMAX power LDMOS transistor

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 www.DataSheet4U.com Product data sheet...



BLF6G27LS-75

NXP Semiconductors


Octopart Stock #: O-677016

Findchips Stock #: 677016-F

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BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 9 PL(M) Gp (W) 75 (dB) 17 ηD 23 ACPR885k ACPR1980k (dBc) −60[2] −50[2] (%) (dBc) Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: N Average output power = 9 W N Power gain = 17 dB N Drain efficiency = 23 % N ACPR885 = −50.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I Internally mat...




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