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BLF6G38-10 Dataheets PDF



Part Number BLF6G38-10
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description WiMAX power LDMOS transistor
Datasheet BLF6G38-10 DatasheetBLF6G38-10 Datasheet (PDF)

BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 14 ηD (%) 20 ACPR885k (dBc) −49[.

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BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 14 ηD (%) 20 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor www.DataSheet4U.com 1.3 Applications I RF power amplifiers for base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G38-10 (SOT975B) 1 1 2 3 sym112 2 BLF6G38-10G (SOT975C) 1 2 3 drain gate source [1] 1 1 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G38-10 BLF6G38-10G Description earless flanged ceramic package; 2 leads earless flanged ceramic package; 2 leads Version SOT975B SOT975C Type number BLF6G38-10_BLF6G38-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 3 February 2009 2 of 15 NXP Semiconductors BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor www.DataSheet4U.com 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 3.1 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type Typ 4.0 4.0 Unit K/W K/W thermal resistance from Tcase = 80 °C; BLF6G38-10 junction to case PL = 10 W (CW) BLF6G38-10G 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.18 mA VDS = 10 V; ID = 18 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 0.9 A VGS = VGS(th) + 3.75 V; ID = 0.6 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 2.7 0.8 328 Typ 1.9 3.6 Max 2.4 1.4 140 1256 Unit V V µA A nA S mΩ pF BLF6G38-10_BLF6G38-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 3 February 2009 3 of 15 NXP Semiconductors BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor www.DataSheet4U.com 7. Application information Table 7. Application information Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 130 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit. Symbol PL(AV) Gp RLin ηD ACPR885k Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W [1] [1] Conditions Min Typ Max Unit 13 18 2 14 20 W dB dB % dBc dBc −10 −49 −46 −64 −61 ACPR1980k adjacent channel power ratio (1980 kHz) [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-10 and BLF6G38-10G are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 130 mA; PL = PL(1dB); f = 3600 MHz. 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = .


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